• DocumentCode
    2068681
  • Title

    Efficient construction of a large-signal behavioural HEMT model from automated vectorial large-signal measurements

  • Author

    Schreurs, D. ; Vandenberghe, S. ; Vandersmissen, R.

  • Author_Institution
    Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    217
  • Lastpage
    221
  • Abstract
    Large-signal models for microwave devices are classically derived via a small-signal detour using S-parameter measurements. Due to the recent advances in the metrology area of vectorial large-signal measurements, several novel modelling methodologies circumventing this small-signal detour are being developed. An important aspect that these methods have in common is the minimisation of the number of required measurements. As in the case of S-parameter measurements, the goal of the large-signal measurements is to adequately cover the predefined operating region of the device-under-test. In this work, we present a method that enables us to automatically calculate the excitation signals to be applied in order to efficiently cover the (V1, V2 ) voltage plane of two-port microwave devices. We illustrate this method on a HEMT, where we obtained a significant (>90%) reduction in measurements. Finally, we show that this limited set of vectorial large-signal measurements is sufficient to construct an accurate time-domain behavioural model
  • Keywords
    high electron mobility transistors; microwave field effect transistors; minimisation; semiconductor device measurement; semiconductor device models; HEMT; S-parameter measurements; automated vectorial large-signal measurements; device-under-test; excitation signals; large-signal behavioural HEMT model; large-signal measurements; large-signal models; measurement minimisation; metrology; microwave devices; modelling methodologies; predefined operating region; small-signal detour; time-domain behavioural model; two-port microwave devices; vectorial large-signal measurements; voltage plane; Area measurement; HEMTs; Metrology; Microwave devices; Microwave measurements; Microwave theory and techniques; Minimization methods; Scattering parameters; Time domain analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
  • Conference_Location
    Vienna
  • Print_ISBN
    0-7803-7049-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2001.974310
  • Filename
    974310