A Unified Consistent DC to RF Large Signal FET Model Covering the Strong Dispersion Effects of HEMT Devices

A large signal FET model is presented which is valid for DC, small signal and nonlinear operation over the whole range of bias conditions. Novel features of the proposed approach include the consideration of dispersion in transconductance and channel conductance as well as the input power dependent pinch-off voltage shift of the investigated HEMT devices. A sequential procedure is outlined describing the extraction of the bias dependent equivalent circuit elements. Simulated results are compared with large signal waveform measurements in the device reference planes. The design of a 24 GHz HEMT oscillator based on the proposed model yields satisfying results in comparison with experiment.