Title :
A high-efficiency high-power BUCK converter based on fully N-type power transistors
Author :
Zhuo Wang ; Yuan Dong ; Xia Wang ; Zekun Zhou ; Xin Ming ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The power consumption of power transistors is a key factor affecting the efficiency of DC-DC converters, especially in high-power applications. With regard to higher speed and lower power consumption with smaller area, N-type MOSFETs are superior to P-type ones. A high-efficiency high-power BUCK converter with fully N-type power transistors is presented in this paper with a wide input range of 4.5V-23V. Besides, the relative ground concept is introduced to reduce the design complexity of pulse-width-modulation (PWM) controller module, and further improve the performance of the converter. The proposed converter has been validated with a standard 0.35 μm BCD technology. The results demonstrate that the converter efficiency is up to 95%within 3A output current.
Keywords :
DC-DC power convertors; PWM power convertors; power MOSFET; power consumption; BCD technology; DC-DC converters; N-type MOSFETs; PWM design complexity; fully N-type power transistors; high-efficiency high-power buck converter; power consumption; pulse-width-modulation controller module; size 0.35 mum; voltage 4.5 V to 23 V; Logic gates; MOSFET; Performance evaluation; Power supplies; Power transistors; Pulse width modulation; Voltage control;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812031
