• DocumentCode
    2068787
  • Title

    Black-Box Modelling of Nonlinear Devices for Frequency-Domain Analysis

  • Author

    Narhi, Tapani

  • Author_Institution
    European Space Agency, European Space Research and Technology Centre, PO Box 299, 2200 AG Noordwijk, The Netherlands.
  • Volume
    2
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    1109
  • Lastpage
    1114
  • Abstract
    A large-signal black-box model for nonlinear microwave devices is presented. The model is directly constructed from measured small-signal s-parameters and DC characteristic curves of the device without complicated parameter extraction procedures. Separate determination of device parasitics is not necessary. The model is self-consistent, very general and device-and technology-independent. Black-box model of a MESFET and its implementation in a frequency-domain analysis program is described, and measured and calculated results are compared.
  • Keywords
    Current measurement; Extraterrestrial phenomena; Frequency domain analysis; Frequency measurement; MESFETs; Microwave devices; Parameter extraction; Scattering parameters; Space technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335853
  • Filename
    4135598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2068787