Title :
Silicon opto-FET for photonic integrated circuits
Author_Institution :
Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania
Abstract :
A silicon opto-FET with special structure that allows the optical coupling to a waveguide was designed, analyzed and experimented on. A 2-D modelling for top illumination and a 3-D modelling for leaky-wave coupling to a waveguide, when the photodetector is in non-uniform illumination, have been performed. The models take into account the dependence of channel depth on channel voltage and two effects of the incident illumination: (1) the variation of channel conductivity; and (2) the variation of channel dimensions due to the photovoltaic effect across the channel-gate junction. In addition, the variation of the photovoltage along the channel width in the case of leaky-wave coupling with a waveguide was considered in the 3D analysis
Keywords :
elemental semiconductors; field effect transistors; integrated optoelectronics; optical waveguides; photodetectors; phototransistors; semiconductor device models; silicon; 2D modelling; 3D modelling; OEIC; Si; Si opto-FET; channel conductivity variation; channel depth; channel dimensions variation; channel voltage; channel-gate junction; field-effect phototransistors; leaky-wave coupling; nonuniform illumination; optical coupling; photodetector; photonic integrated circuits; photovoltage variation; photovoltaic effect; top illumination; waveguide; Coupling circuits; Lighting; Optical coupling; Optical design; Optical waveguides; Photodetectors; Photonic integrated circuits; Silicon; Three dimensional displays; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974319
