CMOS 1.2V bandgap voltage reference design

Author

Chao Feng ; Jinhui Wang ; Wei Wu ; Ligang Hou ; Jianbo Kang

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

A typical bandgap voltage reference based on CSMC 0.35 μm CMOS technology is designed and fabricated. The overall bandgap architecture is optimized to achieve high accuracy temperature and power supply independent voltage reference. The design consists of the bandgap core circuit, op-amp, and start-up circuit. The test results show that the bandgap reference circuit provides reference voltage of 1.2128 V to 1.2175 V with 3.3 V power supply and temperature range from -40°C to 80°C simultaneously, and the temperature coefficient is 32.2ppm/°C. The total layout area including dummy structures is 135 um×236 um.

Keywords

CMOS integrated circuits; integrated circuit design; reference circuits; CMOS bandgap voltage reference design; CSMC CMOS technology; bandgap architecture; bandgap core circuit; dummy structures; high accuracy temperature; op-amp; power supply independent voltage reference; size 0.35 mum; start-up circuit; temperature -40 degC to 80 degC; temperature coefficient; voltage 1.2 V; voltage 1.2128 V to 1.2175 V; voltage 3.3 V; CMOS integrated circuits; Conferences; Layout; Photonic band gap; Temperature distribution; Temperature sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6812039

Filename

6812039