A common gate low noise amplifier with high linearity over UHF RFID bands

Author

Roh, Hyoung-Hwan ; Park, Kyoung-Tae ; Oh, Ha-Ryong ; Seong, Yeung-Rak ; Park, Jun-Seok ; Kang, Min-Soo

Author_Institution

Dept. of Electr. Eng., Kookmin Univ., Seoul

fYear

2008

fDate

19-23 May 2008

Firstpage

88

Lastpage

91

Abstract

A CMOS common gate LNA with high linearity over UHF mobile RFID bands is presented. A common gate configuration applied to design the proposed LNA overall leads to high linearity and wide band characteristics. Proposed LNA is fabricated with 0.35 mum (one poly, four metals) CMOS manufacturing technology. The proposed LNA shows 3.2 dB noise figure, 13.4 dB voltage gain with 1.4 dBm P1 dB.

Keywords

CMOS integrated circuits; UHF amplifiers; low noise amplifiers; radiofrequency identification; CMOS; CMOS common gate LNA; UHF RFID bands; gain 13.4 dB; low noise amplifier; noise figure; noise figure 3.2 dB; size 0.35 micron; voltage gain; Circuit topology; Coupling circuits; Directional couplers; Electromagnetic compatibility; Linearity; Low-noise amplifiers; MMICs; Radio transmitters; Radiofrequency identification; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on

Conference_Location

Singapore

Print_ISBN

978-981-08-0629-3

Electronic_ISBN

978-981-08-0629-3

Type

conf

DOI

10.1109/APEMC.2008.4559818

Filename

4559818