Title :
A common gate low noise amplifier with high linearity over UHF RFID bands
Author :
Roh, Hyoung-Hwan ; Park, Kyoung-Tae ; Oh, Ha-Ryong ; Seong, Yeung-Rak ; Park, Jun-Seok ; Kang, Min-Soo
Author_Institution :
Dept. of Electr. Eng., Kookmin Univ., Seoul
Abstract :
A CMOS common gate LNA with high linearity over UHF mobile RFID bands is presented. A common gate configuration applied to design the proposed LNA overall leads to high linearity and wide band characteristics. Proposed LNA is fabricated with 0.35 mum (one poly, four metals) CMOS manufacturing technology. The proposed LNA shows 3.2 dB noise figure, 13.4 dB voltage gain with 1.4 dBm P1 dB.
Keywords :
CMOS integrated circuits; UHF amplifiers; low noise amplifiers; radiofrequency identification; CMOS; CMOS common gate LNA; UHF RFID bands; gain 13.4 dB; low noise amplifier; noise figure; noise figure 3.2 dB; size 0.35 micron; voltage gain; Circuit topology; Coupling circuits; Directional couplers; Electromagnetic compatibility; Linearity; Low-noise amplifiers; MMICs; Radio transmitters; Radiofrequency identification; Transmitting antennas;
Conference_Titel :
Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-981-08-0629-3
Electronic_ISBN :
978-981-08-0629-3
DOI :
10.1109/APEMC.2008.4559818
