• DocumentCode
    2069064
  • Title

    Frequency-domain characterization of conductance and capacitance of resonant tunneling diode

  • Author

    Liu, W.Y. ; Steenson, D.P.

  • Author_Institution
    Agilent Technologies, Ghent, Belgium
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    313
  • Lastpage
    318
  • Abstract
    An electrical characteristic that exhibits sharp discontinuity in its curve trace cannot be accurately characterized using conventional polynomial regression algorithms. The electrical characteristic of a resonant tunneling diode (RTD) is a typical example with sharp discontinuities in the negative differential resistance regions (NDR regions). The discontinuities in the NDR regions can easily create convergence failure and accuracy problems in frequency-domain simulation. In this paper, a continuity function based technique is proposed to characterize the strongly nonlinear electrical behavior of an RTD in the frequency domain. Particular reference is given to obtain a closed form CAD model that accurately simulates the high-order nonlinearities due to the discontinuities along the curve trace. Experimental evidence reveals that the frequency domain technique can yield a reliable first order estimate of the C-V characteristic
  • Keywords
    circuit CAD; frequency-domain analysis; microwave diodes; negative resistance; resonant tunnelling diodes; semiconductor device models; C-V characteristic; capacitance; closed form CAD model; conductance; continuity function based technique; convergence failure; frequency-domain characterization; frequency-domain simulation; high-order nonlinearities; negative differential resistance regions; resonant tunneling diode; strongly nonlinear electrical behavior; Capacitance; Convergence; Diodes; Electric resistance; Electric variables; Frequency domain analysis; Frequency estimation; Polynomials; Resonant tunneling devices; Yield estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
  • Conference_Location
    Vienna
  • Print_ISBN
    0-7803-7049-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2001.974326
  • Filename
    974326