DocumentCode
2069128
Title
An Investigation of Efficiency Limiting Mechanisms in GaAs MESFET Amplifiers
Author
Winslow, T.A. ; Trew, R.J.
Volume
2
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
1195
Lastpage
1200
Abstract
An advanced large signal, physics based MESFET model is used to investigate the effects of gate-drain breakdown on high efficiency amplifier operation. As the drain bias relative to breakdown and the input power drive level are varied, the device input and output impedances shift causing impedance matching difficulties. Optimal tuning and bias for high efficiency operation can be achieved by modification of the position of the dynamic load line relative to the MESFET breakdown characteristic. In this manner the maximum achievable efficiency is obtained. Harmonic tuning is confirmed to be critical for obtaining maximum efficiency.
Keywords
Breakdown voltage; Electric breakdown; Gallium arsenide; Impedance; MESFET circuits; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor process modeling; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335866
Filename
4135611
Link To Document