DocumentCode
2069146
Title
Low-resistance wide-voltage-range analog switch for implantable neural stimulators
Author
Yunpu Hu ; Songping Mai ; Yixin Zhao ; Chun Zhang
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
Analog switch is a basic component in neural stimulators as it plays an important role in the control process of opening or closing stimulation, switching electrode polarity or power supply. In implantable stimulator circuit, the switch is usually required to work under a wide-range changing voltage and keep a fairly low on-resistance and low charge injection. In this paper, a switch and its driving system are proposed. The driving system can provide a stable high voltage to drive the NMOS transistor switch, thus solving conflicts between high voltage output and low voltage supply. According to the result from transistor-level simulation based on 0.35um CMOS high-voltage technology, the analog switch can achieve fast speed (ton=70ns, toff=280ns), low and flat resistance (4.5Ohm on average), low charge injection (20pC), extremely low current leak(36pA), and wide working voltage range from 1.8V to 12V, which completely meets the application requirement of neural stimulators.
Keywords
CMOS analogue integrated circuits; biomedical equipment; field effect transistor switches; prosthetics; CMOS high-voltage technology; NMOS transistor switch; implantable neural stimulators; implantable stimulator circuit; low-resistance wide-voltage-range analog switch; size 0.35 mum; transistor-level simulation; voltage 1.8 V to 12 V; Capacitors; Charge pumps; Power demand; Simulation; Switches; Switching circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6812045
Filename
6812045
Link To Document