Title :
40 Gbit/s reshaping amplifier cell
Author :
Meliani, C. ; Mouzannar, W. ; Jorge, F. ; Lefevre, R.
Abstract :
The design of a 40 Gbit/s reshaping amplifier cell with 6 dB gain and a 2 V output signal for ETDM transmission system is presented. The switching-speed of the structure is improved, as well as the reshaping and the limiting effects, by optimising the transistor sizes, DC operating points and the layout design. The chip is fabricated in a GaAs p-HEMT technology with typical Ft of about 95 GHz, using microstrip transmission lines. Careful layout analysis is performed to optimise propagation phenomena and to minimise interconnection parasitic elements
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium arsenide; integrated optoelectronics; optical fibre communication; optical transmitters; preamplifiers; time division multiplexing; 2 V; 40 Gbit/s; 6 dB; 95 GHz; DC operating points; ETDM transmission system; GaAs; III V semiconductors; interconnection parasitic elements; layout design; limiting effects; microstrip transmission lines; p-HEMT technology; propagation phenomena; reshaping amplifier cell; switching-speed; Bit error rate; Bit rate; Fabrication; Gallium arsenide; Integrated circuit interconnections; Optical amplifiers; Optical fibers; Switches; Voltage; Wavelength division multiplexing;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974329
