An Improved Method of Parasitic Extraction for Non-Linear Modelling of Microwave Power MESFET´s

Modern non-linear CAD techniques require accurate models of active components for the analysis of non-linear circuits. An improved technique of model extraction from measurements is presented, which accounts for capacitive parasitics in a more physical way. An improved equivalent circuit of the MESFET results. This technique is especially useful when modelling large power MESFET´s.