• DocumentCode
    2069199
  • Title

    Performance and Large Signal Modelling of a GaAs Heterojunction Bipolar Transistor Mixer at 950MHz

  • Author

    Xavier, B.A. ; Aitchison, C.S.

  • Author_Institution
    Brunel University, Dept of Electrical & Electronic Engineering, Uxbridge, Middx, U.K, UB8 3PH.
  • Volume
    2
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    1211
  • Lastpage
    1216
  • Abstract
    A GaAs heterojunction bipolar transistor (HBT) single ended active mixer is discussed. Simulations are performed using a large signal HBT model. A novel way of incorporating the d.c equations of an HBT into a large signal simulator is described. Both conversion gain and intermodulation properties are predicted to within ±3dB of measured values. The measured intermodulation performance of the device in a tuned state is superior to both a resistive MESFET and HEMT mixer.
  • Keywords
    Circuit simulation; Diodes; Energy consumption; Equations; Gain measurement; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; Microwave devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335869
  • Filename
    4135614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069199