DocumentCode
2069213
Title
Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements
Author
Vidkjaer, J. ; Porra, V. ; Zhu, J. ; Huttunen, T.
Author_Institution
Electromagnetics Inst., Technical Univ. of Denmark, DK-2800 Lyngby, Denmark
Volume
2
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
1217
Lastpage
1222
Abstract
A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.
Keywords
Bipolar transistors; Covariance matrix; Ellipsoids; Matrix decomposition; Measurement errors; Power system modeling; Predictive models; Scattering parameters; Singular value decomposition; UHF measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335870
Filename
4135615
Link To Document