Study of transient response characteristics of electrons in GaN by Monte Carlo method

The authors have theoretically investigated transient response of electrons in bulk Wurtzite GaN at 300K using one particle monte-carlo method. The relevant lattice scattering mechanisms like deformation potential acoustic phonons, polar optical phonons, impurity and intervalley phonon scatterings are incorporated in the Boltzmann transport equation which is then solved to obtain the transient response characteristics. The transient response characteristics at 300K show that higher peak drift velocities are obtained at higher field values. The velocity - field characteristics for electrons at 300K exhibit a negative differential resistance (NDR) effect.