An analytical modeling of interface charge induced effects on subthreshold current and subthreshold swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs

Author

Kumar, Manoj ; Dubey, Souvik ; Jit, S. ; Tiwari, P.K.

Author_Institution

Dept. of Electron. Eng., Indian Inst. of Technol. (BHU), Varanasi, India

fYear

2012

fDate

17-19 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

A surface potential based two-dimensional (2-D) analytical model for subthreshold current and subthreshold swing including the hot carrier induced interface charges effect of strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs is presented. The analytical model takes into account the effects of all device parameters along with Ge mole fraction in the relaxed Si_1-xGe_x layer, interface charge density and length of damaged region on subthreshold characteristics. For the validation of the proposed model, the model results are compared with numerical simulation results obtained from 2-D device simulator ATLAS by Silvaco.

Keywords

MOSFET; numerical analysis; semiconductor device models; silicon-on-insulator; 2-D device simulator; ATLAS; MOSFET; SGOI; Silvaco; analytical modeling; hot carrier induced interface charges effect; interface charge induced effects; numerical simulation; silicon-germinium-on-insulator; subthreshold current; subthreshold swing; surface potential based two-dimensional analytical model; Interface charges; SGOI; s-Si; subthreshold current; subthreshold swing;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication (CODEC), 2012 5th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-2619-3

Type

conf

DOI

10.1109/CODEC.2012.6509255

Filename

6509255