DocumentCode
2069362
Title
A simple analytical model of silicon on insulator tunnel FET
Author
Kanungo, Sayan ; Rahaman, Hafizur ; Gupta, Partha Sarathi ; Dasgupta, P.S.
Author_Institution
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Howrah, India
fYear
2012
fDate
17-19 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy.
Keywords
field effect transistors; semiconductor device models; silicon-on-insulator; 2D potential distribution; SOI TFET structure; Si; channel potential; middle portion; silicon on insulator; simple analytical model; sinusoidal potential distribution; sub-threshold regime; tunnel FET; Band to band tunneling; SOI-TFET; Sub-threshold Swing; TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location
Kolkata
Print_ISBN
978-1-4673-2619-3
Type
conf
DOI
10.1109/CODEC.2012.6509256
Filename
6509256
Link To Document