DocumentCode :
2069619
Title :
Evaluation of Cyanoethyl Pullulan material as the dielectric layer for EWOD devices
Author :
Jianfeng Chen ; Yu Yuhua ; Xiangyu Zeng ; Jian Li ; Jia Zhou
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
The excellent dielectric and electrowetting properties of Cyanoethyl Pullulan (CEP) material were evaluated in this paper. The CEP can obtained a dielectric constant of 18 (100 kHz) by spin-coating and annealing at 100°C in atmosphere. The asymmetry, reversibility and stability of electrowetting on CEP were studied, showing negative-potential sensitive and good electrowetting performance. Based on these results, an EWOD device with 1μm thick CEP dielectric layer has been fabricated and tested, demonstrating the successful manipulation of water droplets with drive voltage of 20 V. The easy fabrication and excellent performance of CEP make it a superior dielectric material in the future EWOD devices.
Keywords :
dielectric materials; microfluidics; wetting; CEP dielectric layer; CEP material; Cyanoethyl Pullulan material evaluation; EWOD devices; annealing; dielectric material; electrowetting asymmetry; electrowetting on dielectric microfluidic device; electrowetting reversibility; electrowetting stability; frequency 100 kHz; negative-potential sensitivity; size 1 mum; spin-coating; temperature 100 degC; voltage 20 V; water droplet manipulation; Annealing; Dielectric constant; Films; Indium tin oxide; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6812063
Filename :
6812063
Link To Document :
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