Title :
Three-dimensional on-chip inductor design based on through-silicon vias
Author :
Feng Liang ; Si-Qi Zhao ; Aobo Chen ; Gaofeng Wang
Author_Institution :
Inst. of Appl. Phys., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper two kinds of three-dimensional (3D) on-chip inductor structures based on through-silicon vias (TSVs) are presented, which are quite suitable for applications in 3D integrated circuits. Their electromagnetic characteristics are analyzed by full-wave electromagnetic simulations and compared to those of planar spiral inductors. The results reveal that the 3D inductors based on TSVs have much smaller area as compared to the planar spiral inductors with the same inductance.
Keywords :
inductors; three-dimensional integrated circuits; 3D integrated circuits; 3D on-chip inductor design; full wave electromagnetic simulations; planar spiral inductors; through silicon vias; Inductance; Inductors; Spirals; Substrates; System-on-chip; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812066
