Thin hermetic passivation of semiconductors using low temperature borosilicate glass - benchmark of a new wafer-level packaging technology

A novel approach on wafer-level passivation using a thin, hermetic borosilicate glass layer replacing the polymers in redistribution is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposited at low temperatures (T<100degC) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photoresist process for masking. The process flow is fully compatible with standard CMOS post processing and is integrated in a state-of-the-art production environment.