An integrated Si bipolar RF transceiver for a zero IF 900 MHz GSM digital mobile radio frontend of a hand portable phone

Author

Sevenhans, Jan ; Vanwelsenaers, Arnoul ; Wenin, J. ; Baro, J.

Author_Institution

Alcatel Bell Telephone, Antwerp, Belgium

fYear

1991

fDate

12-15 May 1991

Abstract

A single-chip solution for a GSM (Group Special Mobile) 900-MHz RF TX quadrature modulator and RX quadrature demodulator was designed and fabricated in a 9-GHz silicon bipolar technology. The transmit modulator is a direct upconverter and the receive demodulator operates in a zero IF architecture. This device is one of the key components of a pocket-size hand-portable phoneset for application in the GSM pan-European digital mobile radio system. The consumption from the battery is 25 mA in RX mode and 45 mA in TX mode. The circuit is powered from a 5-V regulated supply voltage

Keywords

bipolar integrated circuits; cellular radio; demodulators; digital radio systems; elemental semiconductors; modulators; radiotelephony; silicon; transceivers; 25 mA; 45 mA; 5 V; 9 GHz; 900 MHz; GSM; RF transceiver; RX quadrature demodulator; Si bipolar technology; TX quadrature modulator; UHF; digital mobile radio frontend; direct upconverter; hand portable phone; regulated supply voltage; zero IF architecture; CMOS digital integrated circuits; CMOS technology; Demodulation; Filters; GSM; Gain; Land mobile radio; Noise figure; Radio frequency; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0015-7

Type

conf

DOI

10.1109/CICC.1991.164033

Filename

164033