Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in GAAS

Author

Lastras-Martínez, A. ; Lara-Velázquez, I. ; Balderas-Navarro, R.E. ; Ortega-Gallegos, J. ; Lastras-Martínez, L.F.

Author_Institution

Inst. de Investigation en Comunicacion Optica, Univ. Autonoma de San Luis Potosi

fYear

2006

fDate

7-10 Nov. 2006

Firstpage

4

Lastpage

7

Abstract

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed in situ at epitaxial growth temperature (580degC) in both n and p-type doping films in the range from 5times10¹⁶-10¹⁹ cm^-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions.

Keywords

III-V semiconductors; carrier density; gallium arsenide; reflectivity; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 580 degC; GaAs; carrier density; doping level; epitaxial growth temperature; impurity level determination; n-type doping film; optical probe; p-type doping film; reflectance difference spectroscopy; Doping; Epitaxial growth; Gallium arsenide; Impurities; Optical films; Performance evaluation; Probes; Reflectivity; Spectroscopy; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Photonics, 2006. MEP 2006. Multiconference on

Conference_Location

Guanajuato

Print_ISBN

1-4244-0627-7

Electronic_ISBN

1-4244-0628-5

Type

conf

DOI

10.1109/MEP.2006.335613

Filename

4135697