• DocumentCode
    2070208
  • Title

    Mechanism of electromigration in Au/Al wirebond and its effects

  • Author

    Zin, E. ; Michael, N. ; Kang, S.H. ; Oh, K.H. ; Chul, U. ; Cho, J.S. ; Moon, J.T. ; Kim, C.-U.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of Texas, Arlington, TX
  • fYear
    2009
  • fDate
    26-29 May 2009
  • Firstpage
    943
  • Lastpage
    947
  • Abstract
    This paper presents findings evidencing that electromigration(EM) imparts significant influence on the kinetics of contact failure of Au wire bonded to an Al pad. Contact resistance between Au wire and Al pad at moderately accelerated test conditions (T=150-175degC; j=5times104A/cm2) revealed that the failure rate depends highly on the direction of electron flow across the contact: electron flow from Au to Al resulted in far faster failure rate than the opposite direction. Microscopic inspection of the contact interface indicated that the wirebond contact failure is related to the growth of Au-Al intermetallic compounds (IMC). EM was found to influence the failure kinetics because it accelerates or decelerates the growth rate of the IMC.
  • Keywords
    alloys; aluminium; contact resistance; gold; lead bonding; Au/Al wirebond; contact failure; contact resistance; electromigration; electron flow; failure kinetics; growth rate; intermetallic compounds; Bonding; Contact resistance; Electromigration; Electrons; Gold; Kinetic theory; Life estimation; Microscopy; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-4475-5
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2009.5074126
  • Filename
    5074126