DocumentCode :
2070228
Title :
Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN
Author :
Das, Teerath ; Panda, Siddhartha ; Bera, P.P. ; Biswas, D.
Author_Institution :
Inst. of Radiophys. & Electron., Univ. of Calcutta, Kolkata, India
fYear :
2012
fDate :
17-19 Dec. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for InXGa1-XP/GaAs, InXGa1-XAs/Al0.2Ga0.8As and InXGa1-XN/GaN QWs.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InXGa1-XAs-Al0.2Ga0.8As; InXGa1-XN-GaN; InXGa1-XP-GaAs; band offsets; optoelectronic properties; strain effect; strained III-V compound semiconductor quantum wells; Band offset; DLTS; Optoelectronic; Quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
Type :
conf
DOI :
10.1109/CODEC.2012.6509295
Filename :
6509295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2070228
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