DocumentCode
2070355
Title
Electronically-tuned optical delay lines in silicon
Author
Khan, S. ; Fathpour, S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
In this work, the properties of the devices in transmission mode are studied and compared with reflection-mode counterparts. The time delay in each case was calculated using the transfer matrix method. The effective refractive index of the sections was determined using the commercial RSoft simulator. A commercial electronic device simulator, ATLAS by Silvaco, was used to determine the carrier concentration in the rib waveguide core at different diode biases. The results on static (e.g., delay tuning range, loss and dispersion) and dynamic (bit rate and switching) properties of the devices are presented and discussed.
Keywords
elemental semiconductors; light transmission; optical delay lines; optical tuning; optical waveguides; refractive index; rib waveguides; silicon; ATLAS; Si; Silvaco; carrier concentration; commercial RSoft simulator; commercial electronic device simulator; diode biases; electronically-tuned optical delay lines; refractive index; rib waveguide core; silicon; transfer matrix; transmission mode; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5943122
Filename
5943122
Link To Document