Title :
Ways of the increasing of a depth of modulation and homogeneity of modulation in semiconductor modulators of the IR-radiation
Author :
Irkha, V. ; Vikulin, I. ; Gorbachev, V.
Author_Institution :
Odessa Nat. Acad. of Telecommun., Ukraine
Abstract :
The different constructive solution for reducing of inhomogeneity of a modulation factors and heightening its efficiency in semiconductor modulators are considered. Thus, the better homogeneity of a modulation factor and the great depth of a modulation we have achieved by the optimization of geometry of modulators and usage of different semiconductor materials.
Keywords :
geometry; modulators; optimisation; p-n junctions; semiconductor device manufacture; semiconductor materials; IR radiation; geometry optimization; heightening; inhomogeneity; modulation depth; modulation factors; modulation homogeneity; p-n junctions; semiconductor materials; semiconductor modulators; Apertures; Charge carriers; Crystallization; Germanium; Modular construction; Ohmic contacts; Optical modulation; Semiconductor diodes; Shape; Structural beams;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2004. Proceedings of the International Conference
Conference_Location :
Lviv-Slavsko, Ukraine
Print_ISBN :
966-553-380-0
