GeSn/SiGeSn RCE photodetectors: A comparative study based on Franz-Keldysh effect and quantum confined stark effect

Author

Chakraborty, Vedatrayee ; Mukhopadhyay, Bodhibrata ; Basu, Palash Kumar

Author_Institution

Inst. of Radiophys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2012

fDate

17-19 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

Ge-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using GeSn/SiGeSn type I structure. Performance of photodetectors using strong Quntum Confined Stark Effect, and Franz-Keldysh Effect in these structures and properties related to photodetection are studied in this paper.

Keywords

cavity resonators; germanium compounds; optical interconnections; photodetectors; quantum confined Stark effect; silicon compounds; Franz-Keldysh effect; GeSn-SiGeSn; RCE photodetector; direct gap type I band alignment; optical interconnection; quantum confined stark effect; resonant cavity enhancement; tensile strained layer; FKE; MQW; QCSE; electroabsorption; electrorefraction; exciton;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication (CODEC), 2012 5th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-2619-3

Type

conf

DOI

10.1109/CODEC.2012.6509304

Filename

6509304