Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

The system of silicon nanocrystals embedded in SiO₂ was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T>230 K. Variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.