Coupling between metallic microstrips on dielectric sustrates

Author

Tecpoyotl-Torres, M. ; Benítez-Ruíz, N. ; Torres-Cisneros, M. ; Ibarra-Manzano, O. ; May-Arrioja, D. ; Sànchez-Mondragón, J.

Author_Institution

Res. Centre for Eng. & Appl. Sci., Autonomous State Univ. of Morelos, Mexico City

fYear

2006

fDate

7-10 Nov. 2006

Firstpage

70

Lastpage

73

Abstract

The analysis and simulation of the coupling between microstrips is realized, showing the corresponding capacitive or inductive walls. We analyze their interference and the changes produced in the electric and magnetic fields, as well as the distance dependence of the interference. The conductive lines on silicon and their crosstalk, produced when their distance is shorter that their width, is considered. The simulations were carried out with FEMLAB.

Keywords

crosstalk; dielectric materials; elemental semiconductors; finite element analysis; microstrip lines; semiconductor-metal boundaries; silicon; FEMLAB; Si; capacitive walls; conductive lines; crosstalk; dielectric substrates; electric fields; inductive walls; magnetic fields; metallic microstrips; Dielectrics; Equations; Interference; Magnetic analysis; Magnetic separation; Microstrip; Optical crosstalk; Permittivity; Silicon; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Photonics, 2006. MEP 2006. Multiconference on

Conference_Location

Guanajuato

Print_ISBN

1-4244-0627-7

Electronic_ISBN

1-4244-0628-5

Type

conf

DOI

10.1109/MEP.2006.335630

Filename

4135714