DocumentCode
2070885
Title
Effect of quanum-well potential shape on the overbarrier resonant hole states
Author
Polupanov, Alexander F. ; Kruglov, Alexis N.
Author_Institution
Inst. for Radio-Eng. & Electron., Russian Acad. of Sci., Moscow
fYear
2006
fDate
7-10 Nov. 2006
Firstpage
102
Lastpage
105
Abstract
One or several resonant hole states related to the absolute reflection at hole scattering on a quantum well were found to exist in the energy range where only heavy holes may propagate over barriers in a quantum-well heterostructure. Energies of resonant states are close to those of peaks of absolute reflection. The qualitative behaviour of the over-barrier scattering and resonant states is the same at variation of quantum well shape and depth, however lifetimes of resonant states depend strongly on all parameters. These long-lived resonant states may be one of the reasons for the efficient hole capture by quantum wells.
Keywords
carrier lifetime; resonant states; semiconductor quantum wells; absolute hole scattering reflection; hole capture; over-barrier resonant hole states; quantum-well heterostructure; quanum-well potential shape; resonant state lifetimes; semiconductor quantum wells; Optical propagation; Optical reflection; Particle scattering; Pattern analysis; Quantum mechanics; Quantum wells; Resonance light scattering; Scattering parameters; Schrodinger equation; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Photonics, 2006. MEP 2006. Multiconference on
Conference_Location
Guanajuato
Print_ISBN
1-4244-0627-7
Electronic_ISBN
1-4244-0628-5
Type
conf
DOI
10.1109/MEP.2006.335639
Filename
4135723
Link To Document