Numerical evaluation of the influence of technology incorrectness on CoolMOS features

The modern unipolar power structures - CoolMOS were to become a breakthrough among the power devices. However, until now no one could manufacture the structures, which parameters overcome the parameters of traditional VDMOS transistors in a significant way. The cause of it is placed in the fact, probably that the manufacturing technology for them is very complicated and advanced. The authors have introduced the analyses of dependencies of the CoolMOS transistor static parameters versus its constructional ones.