DocumentCode
2071267
Title
Coupling coefficient improvement for inductor coupled vertical interconnect in 3D IC die stacking
Author
Lu, Hsin-Chia ; Wu, Guan-Ming ; Pan, Chuan ; Chou, Yien-Tien
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fYear
2009
fDate
26-29 May 2009
Firstpage
1207
Lastpage
1212
Abstract
We proposed a vertical magnetic coupled interconnect design procedure for 3D IC stacking. As the interconnect is modeled as a coupled inductor pair, we can convert it into a bandpass filter by adding series and shunt capacitors. With given center frequency and bandwidth of the bandpass filter, the required self and mutual inductance in magnetic coupled interconnect and serial and parallel capacitance can be calculated quickly. In our design using TSMC 0.18 mum CMOS process, the addition of capacitors increased the transmission coefficient by 7 dB. The size of loops for magnetic coupled interconnect is 200 mum, the communication distance is 30 mum. By using an ASK modulation scheme, we can up-covert the baseband signal spectrum to the lower loss passband of the filter. Our bandpass interconnect can achieve 3.5 Gbps data rate and 6.77 pJ/bit power consumption.
Keywords
CMOS integrated circuits; band-pass filters; integrated circuit interconnections; 3D integrated circuit die stacking; CMOS process; bandpass filter; coupling coefficient improvement; inductor coupled vertical interconnect; mutual inductance; size 0.18 mum; size 200 mum; Band pass filters; Bandwidth; Capacitors; Couplings; Frequency; Inductors; Magnetic separation; Shunt (electrical); Stacking; Three-dimensional integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074165
Filename
5074165
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