Title :
Coupling coefficient improvement for inductor coupled vertical interconnect in 3D IC die stacking
Author :
Lu, Hsin-Chia ; Wu, Guan-Ming ; Pan, Chuan ; Chou, Yien-Tien
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
We proposed a vertical magnetic coupled interconnect design procedure for 3D IC stacking. As the interconnect is modeled as a coupled inductor pair, we can convert it into a bandpass filter by adding series and shunt capacitors. With given center frequency and bandwidth of the bandpass filter, the required self and mutual inductance in magnetic coupled interconnect and serial and parallel capacitance can be calculated quickly. In our design using TSMC 0.18 mum CMOS process, the addition of capacitors increased the transmission coefficient by 7 dB. The size of loops for magnetic coupled interconnect is 200 mum, the communication distance is 30 mum. By using an ASK modulation scheme, we can up-covert the baseband signal spectrum to the lower loss passband of the filter. Our bandpass interconnect can achieve 3.5 Gbps data rate and 6.77 pJ/bit power consumption.
Keywords :
CMOS integrated circuits; band-pass filters; integrated circuit interconnections; 3D integrated circuit die stacking; CMOS process; bandpass filter; coupling coefficient improvement; inductor coupled vertical interconnect; mutual inductance; size 0.18 mum; size 200 mum; Band pass filters; Bandwidth; Capacitors; Couplings; Frequency; Inductors; Magnetic separation; Shunt (electrical); Stacking; Three-dimensional integrated circuits;
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2009.5074165