Title :
Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel
Author :
Akturk, Akin ; Pennington, Gary ; Goldsman, Neil
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
We report on predicting the improvement in conventional nanoscale MOSFET performance that is obtained when Carbon Nanotubes (CNTs) are placed in the device channel. We developed a CNT-MOSFET simulator, using Monte Carlo methods and a quantum drift-diffusion model. The simulation results indicate that performance is enhanced for MOSFETs with zigzag CNTs of diameters which are approximately 8 Å.
Keywords :
MOSFET; Monte Carlo methods; carbon nanotubes; nanotube devices; semiconductor device models; 8 Å; Monte Carlo methods; carbon nanotubes; nanoscale MOSFET; quantum drift diffusion model; Acoustic scattering; Carbon nanotubes; Electron mobility; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Phonons; Poisson equations; Silicon;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231705
