Comparison of quantum correction models for ultratin oxide single- and double-gate MOS structures under the inversion conditions

In this paper various quantum correction models for single- and double-gate MOS structures have been investigated and compared systematically. To accurately model the quantum effects for nanoscale MOS device with different structures, a unified quantum correction model is also presented. The position of the charge concentration peak, the maximum of the charge concentration, the total inversion charge sheet density, and the average inversion charge depth are examined simultaneously in the comparison of models. Among the results we have found the physical quantity calculated with our model is more close to the result of Schrodinger-Poisson equations.