Title :
Gas sensing properties of single-crystalline indium oxide nanowires
Author :
Zhang, Daihua ; Li, Chao ; Liu, Xiaolei ; Han, Song ; Tang, Tao ; Zhou, Chongwu
Author_Institution :
Dept. of Electr. Eng. - Electrophys., Southern California Univ., Los Angeles, CA, USA
Abstract :
Single crystalline In2O3 nanowires were synthesized and then utilized to construct field effect transistors (FETs) consisting of individual nanowires. Chemical sensors based on these In2O3 nanowire FETs have been demonstrated. Upon exposure to gaseous molecules such as NO2 and NH3, the electrical conductance of the In2O3 nanowire FETs is found to be dramatically modified, accompanied by substantial shifts in the threshold gate voltage. Our In2O3 nanowire sensors exhibit significantly improved sensitivity to NO2 gas, as well as shortened response times compared to most existing solid-state gas sensors. In addition, NH3 gas sensing properties of In2O3 nanowires have also been carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In2O3 nanowires.
Keywords :
electrical conductivity; field effect transistors; gas sensors; indium compounds; nanowires; semiconductor materials; FET; In2O3; NH3; NO2-NH3 molecules; No2; chemical sensors; doping concentrations; electrical conductance; field effect transistors; gas sensing properties; gaseous molecules; semiconducting In2O3 nanowires; single crystalline indium oxide nanowires; solid state gas sensors; substantial shifts; threshold gate voltage; Chemical sensors; Crystallization; Delay; FETs; Gas detectors; Indium; Nanowires; Semiconductor device doping; Solid state circuits; Threshold voltage;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231710
