Title :
Rectifying effect in boron nanowire device
Author :
Wang, Dawei ; Otten, Carolyn Jones ; Buhro, William E. ; Lu, Jia G.
Author_Institution :
Dept. of Chem. Eng. & Mater. Sci., California Univ., Irvine, CA, USA
Abstract :
Ni and Ti have been used as contact electrodes to the crystalline boron nanowires synthesized by catalyzed chemical vapor deposition method. Three-terminal electrical measurements showed that boron nanowire behaves as p-type semiconductor. Ni forms ohmic contact to the nanowire and Ti-nanowire forms Schottky junction. Rectifying effect has been observed for devices with Ni as one electrode and Ti as the other one.
Keywords :
CVD coatings; Schottky barriers; boron; electrodes; nanowires; nickel; ohmic contacts; semiconductor device measurement; semiconductor materials; titanium; B; Ni electrode; Ni-Au; Schottky junction; Ti electrode; Ti-Au; chemical vapor deposition; contact electrodes; crystalline boron nanowire device; ohmic contact; p type semiconductor; rectifying effect; three terminal electrical measurements; Boron; Carbon nanotubes; Chemical vapor deposition; Crystallization; Electrodes; Nanoscale devices; Nickel; Ohmic contacts; Semiconductivity; Semiconductor nanostructures;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231711
