Title :
Signal integrity modeling and measurement of TSV in 3D IC
Author :
Joohee Kim ; Joungho Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
In order to guarantee signal integrity of a TSV-based channel in 3D IC design, the modeling and measurements are conducted for electrical characterization of the TSV-based channel including TSVs and RDLs with various performance metrics such as insertion loss, noise coupling and eye diagrams. Based on the modeling and measurements of the fabricated TSV channels, design guide for the signal integrity of the channel is proposed.
Keywords :
integrated circuit design; three-dimensional integrated circuits; 3D IC design; TSV measurement; TSV-based channel; electrical characterization; eye diagram; insertion loss; noise coupling; performance metrics; signal integrity modeling; Integrated circuit interconnections; Integrated circuit modeling; Metals; Silicon; Substrates; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4673-3029-9
DOI :
10.1109/ASPDAC.2013.6509551
