Title :
Design of broad-band mm-wave sige power amplifiers applying full EM simulation
Author :
Hamidian, Amin ; Subramanian, Viswanathan ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
Abstract :
This work presents the design of two broad-band mm-wave power amplifiers utilizing the 200 GHz 0.25 μm SiGe HBTs. The broad-band gain performance of the power amplifiers has been achieved utilizing cascaded structures. Also a full electro-magnetic simulation is utilized to decrease the discrepancies between the simulated and measured results. The two-stage power amplifier with the cascode topology achieves a flat gain response with a 3 dB gain bandwidth covering almost the entire V-band (50 GHz to 70 GHz). With a 20 dB power gain the maximum output power at 1 dB gain compression and saturation level are 14 dBm and 15 dBm. The measured peak power added efficiency is 15%.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; semiconductor materials; HBT; SiGe; V-band; broadband mm-wave power amplifier design; cascode topology; efficiency 15 percent; flat gain response; frequency 200 GHz; frequency 50 GHz to 70 GHz; full EM simulation; full electromagnetic simulation; gain 1 dB; gain 20 dB; gain 3 dB; peak power added efficiency; size 0.25 mum; two-stage power amplifier; Broadband amplifiers; Gain; Impedance matching; Integrated circuit modeling; Power amplifiers; Transistors; 60 GHz; Broad-band gain; Electro-Magnetic simulation; Power amplifier; SiGe-HBT;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Sitges
Print_ISBN :
978-1-61284-963-8
DOI :
10.1109/IMWS3.2011.6061890
