A kind of third-harmonic circuits based on GaAs PHEMT at W-band

Author

Xiaobin Luo ; Chao Yue ; Shunyong Du ; Lijie Zhou ; Xin Lv

Author_Institution

Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

25-28 Aug. 2013

Firstpage

262

Lastpage

265

Abstract

A third-harmonic circuit is proposed by using GaAs PHEMT at W-band in the paper. The circuit mainly consists of the power amplifier drive unit and frequency multiplier unit. First, the frequency multiplier circuit is designed which can realize third-harmonic amplifying by taking advantage of strong non-linear characteristics of devices. Then the power amplifier including three-stage and two-channel devices is completed which is used to provide enough input signal for the latter frequency multiplier circuit. Finally the whole circuit is formed combining the two units into together and the output signal is obtained through the band-pass filter at W-band. The simulation result shows that the output power may reach 5dBm at 105GHz when the input power is 10dBm at 35GHz.

Keywords

band-pass filters; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave filters; GaAs; PHEMT; W-band; band-pass filter; f third-harmonic circuits; frequency 105 GHz; frequency 35 GHz; frequency multiplier unit; input signal; nonlinear characteristics; output signal; power amplifier drive unit; two-channel devices; Gallium arsenide; Harmonic analysis; PHEMTs; Power amplifiers; Power generation; Power harmonic filters; Simulation; GaAs PHEMT; W-band; frequency multiplier; power amplifier; third-harmonic;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on

Conference_Location

Qingdao

Type

conf

DOI

10.1109/ICMTCE.2013.6812430

Filename

6812430