CMOS Low-Noise Amplifier with Switching Groups for MB-OFDM UWB Wireless Radio System

Author

Huang, Zhe-Yang ; Huang, Che-Cheng ; Chen, Chun-Chieh ; Hung, Chung-Chih

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

24-26 Sept. 2007

Firstpage

809

Lastpage

812

Abstract

This paper presents a low-noise amplifier (LNA) with switching groups for MB-OFDM Group-A, C, D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of ll.ldB, input and output matching lower then -8.4 dB and -8.3 dB, and a minimum NF of 3.8 dB can be achieved, while the power consumption is 24.8 mW through 1.8 V power supply.

Keywords

CMOS analogue integrated circuits; OFDM modulation; low noise amplifiers; radio networks; ultra wideband communication; CMOS low-noise amplifier; LNA; MB-OFDM; RF CMOS process; UWB wireless radio system; gain 11.1 dB; power 24.8 mW; size 0.18 mum; switching groups; voltage 1.8 V; Broadband amplifiers; Capacitors; Communication switching; Energy consumption; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Ultra wideband technology; LNA and Low-Noise Amplifier; MB-OFDM; RFIC; Switching Capacitors; UWB; Ultra-Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband, 2007. ICUWB 2007. IEEE International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0521-3

Electronic_ISBN

978-1-4244-0521-3

Type

conf

DOI

10.1109/ICUWB.2007.4381055

Filename

4381055