Simulation of spin-polarized transport in submicrometer device structures

Author

Saikin, Semion ; Shen, Min ; Cheng, Ming-C ; Privman, Vladimir

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

91

Abstract

The Monte Carlo approach is utilized to study spin-polarized electron transport in spintronic device structures. Evolution of the electron spin polarization vector is controlled by the spin-orbit interaction. Spin polarization properties, including the spin-dephasing length and orientation of the polarization vector, are investigated, for the applied voltage from 0.05 V to 0.25 V, and for temperatures ranging from 77 K to 300 K.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; field effect transistors; indium compounds; magnetoelectronics; semiconductor device models; spin polarised transport; spin-orbit interactions; 0.05 to 0.25 V; 77 to 300 K; InAlAs; Monte Carlo simulation; electron spin polarization vector; spin dephasing length; spin orbit interaction; spin polarized electron transport; spintronic device structures; submicrometer spintronic device structures; Computational modeling; Distribution functions; Electrons; Magnetoelectronics; Monte Carlo methods; Physics; Polarization; Quantum computing; Region 8; Spin polarized transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231722

Filename

1231722