Design of 8mm Ka-band broadband LNA

Author

Shunyong Du ; Deyong Guo ; Xiaobin Luo ; Chao Yue ; Lijie Zhou

Author_Institution

Microwave & Millimeter Wave Lab., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

25-28 Aug. 2013

Firstpage

266

Lastpage

269

Abstract

The HEMT model in this article is applied by OMMIC D01PH. In this article we design a five circuit, the first two levels are designed for minimum noise and the last three for maximum gain design. The center frequency of this design is 35 GHz with 6 GHz bandwidth, gain is greater than 30dB and the noise figure is less than 3dB. This article describes a Ka-band low-noise amplifier design idea. In this idea we put up two options for the bias circuit design, one is drain supply by a single power and the other is dual-power supply for the drain and gate. We make circuit design and simulation for each program and the simulation results were analyzed and compared.

Keywords

MMIC amplifiers; high electron mobility transistors; integrated circuit design; integrated circuit modelling; integrated circuit noise; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; HEMT model; Ka-band broadband LNA; OMMIC D01PH; bandwidth 6 GHz; bias circuit design; dual-power drain supply; frequency 35 GHz; low-noise amplifier; maximum gain design; single power drain supply; size 8 mm; Gain; Integrated circuit modeling; Microwave amplifiers; Microwave circuits; Noise; Noise figure; Power supplies; LNA; MMIC; bias; layout;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on

Conference_Location

Qingdao

Type

conf

DOI

10.1109/ICMTCE.2013.6812431

Filename

6812431