Title :
Low power consumption millimeter-wave amplifiers using InP HEMT technology
Author :
Liu, Liang ; Alt, Andreas R. ; Benedickter, Hansruedi ; Bolognesi, C.R.
Author_Institution :
Millimeter-Wave Electron., ETH-Zurich, Zürich, Switzerland
Abstract :
We designed and fabricated an X-band low noise amplifier (LNA), a millimeter-wave broadband amplifier and a W-band amplifier MMICs in this paper. The amplifiers were fabricated with the ETH 0.1 μm InP HEMT coplanar waveguide (CPW) MMIC process. With an ultra low DC power consumption of 1.1 mW, the X-band LNA exhibits a gain of 9.5 ± 1.0 dB from 6.2 to 11 GHz and a minimum noise figure of 1.5 dB at 9.8 GHz. The broadband amplifier exhibits gains greater than 17 dB from 27.5 to 83 GHz, with a DC power consumption of only 13.1 mW. A W-band amplifier with a gain of 21.2 ± 1.5 dB from 90 to 102 GHz was also demonstrated in the paper. The performance of the amplifiers is enabled by the excellent characteristics of our InP HEMTs under low-power dissipation biases.
Keywords :
III-V semiconductors; MIMIC; coplanar waveguides; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; HEMT technology; InP; LNA; W-band amplifier MMICETH HEMT CPW MMIC process; W-band amplifier MMICETH HEMT coplanar waveguide MMIC process; W-band amplifier MMICs; X-band low noise amplifier; frequency 27.5 GHz to 83 GHz; frequency 6.2 GHz to 11 GHz; frequency 90 GHz to 102 GHz; low power consumption millimeter-wave broadband amplifiers; noise figure 1.5 dB; power 1.1 mW; power 13.1 mW; size 0.1 mum; ultralow DC power consumption; Broadband amplifiers; Coplanar waveguides; Gain; HEMTs; Indium phosphide; MMICs; Power demand; CPW; HEMT; InP; LNA; amplifier; broadband; low power; millimeter-wave;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Sitges
Print_ISBN :
978-1-61284-963-8
DOI :
10.1109/IMWS3.2011.6061898
