Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression

A 3D through-silicon-via (TSV)-integrated hybrid ReRAM/multi-level-cell (MLC) NAND solid-state drive´s (SSD´s) architecture is proposed with NAND-like interface (I/F) and sector-access overwrite policy for ReRAM. Furthermore, intelligent data management algorithms are proposed to suppress data fragmentation and excess usage of MLC NAND. As a result, 11-times performance increase, 6.9-times endurance enhancement and 93% write energy reduction are achieved. Both ReRAM write and read latency should be less than 3 μs to obtain these improvements. The required endurance for ReRAM is 10⁵.