DocumentCode
2072666
Title
Coherence and dephasing in self-assembled quantum dots
Author
Hvam, J.M. ; Leosson, K. ; Birkedal, D.
Author_Institution
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Volume
1
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
122
Abstract
We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0 K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; interface states; light coherence; multiwave mixing; phonon-exciton interactions; photoluminescence; self-assembly; semiconductor quantum dots; spectral line broadening; 0 K; InGaAlAs; InGaAlAs self-assembled quantum dots; coherence; coherence time; degenerate four wave mixing; dephasing; exciton-phonon interactions; finite temperatures; inferred homogeneous line widths; inhomogeneous broadening mechanism; photoluminescence; pure dephasing; quantum dot coherence; Excitons; Four-wave mixing; Photoluminescence; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Space technology; Temperature; Time measurement; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231730
Filename
1231730
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