• DocumentCode
    2072666
  • Title

    Coherence and dephasing in self-assembled quantum dots

  • Author

    Hvam, J.M. ; Leosson, K. ; Birkedal, D.

  • Author_Institution
    Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
  • Volume
    1
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    122
  • Abstract
    We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0 K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; interface states; light coherence; multiwave mixing; phonon-exciton interactions; photoluminescence; self-assembly; semiconductor quantum dots; spectral line broadening; 0 K; InGaAlAs; InGaAlAs self-assembled quantum dots; coherence; coherence time; degenerate four wave mixing; dephasing; exciton-phonon interactions; finite temperatures; inferred homogeneous line widths; inhomogeneous broadening mechanism; photoluminescence; pure dephasing; quantum dot coherence; Excitons; Four-wave mixing; Photoluminescence; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Space technology; Temperature; Time measurement; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231730
  • Filename
    1231730