DocumentCode :
2072668
Title :
The over-bump applied resin wafer-level underfill process: Process, material and reliability
Author :
Feger, Claudius ; LaBianca, Nancy ; Gaynes, Michael ; Steen, Steven ; Liu, Zhen ; Peddi, Raj ; Francis, Mark
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY
fYear :
2009
fDate :
26-29 May 2009
Firstpage :
1502
Lastpage :
1505
Abstract :
The over bump applied resin (OBAR) process is a wafer-level underfill (WLUF) process in which a filled resin is applied over the bumps of a wafer and, dried. The wafer is diced into coated chips which are aligned and joined to a substrate resulting in an underfilled flip chip package. This process has been evaluated by IBM on several test vehicles in close cooperation with Henkel (formerly Abelstik) who developed a material specifically to fit this process. The critical steps to make this technology work are alignment of OBAR coated chip to a substrate, elimination of significant voids, formation of a fillet with appropriate shape and size, fluxing and solder joining. The reliability of the material was evaluated after capping and BGA (Ball Grid Array) attach through JEDEC level 3 preconditioning followed by DTC (deep thermal cycling), T&H (temperature and humidity), and HTS (high temperature storage). While some improvements are still needed, the OBAR process has been shown to be a viable alternative to capillary underfill application.
Keywords :
ball grid arrays; flip-chip devices; integrated circuit reliability; soldering; wafer level packaging; ball grid array; coated chips; deep thermal cycling; high temperature storage; over-bump applied resin wafer-level underfill process; reliability; solder joining; underfilled flip chip package; Appropriate technology; Flip chip; Material storage; Materials reliability; Materials testing; Packaging; Resins; Temperature; Vehicles; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2009.5074211
Filename :
5074211
Link To Document :
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