DocumentCode :
2072730
Title :
InAs quantum dot and nanowhisker formation by metalorganic chemical vapor deposition in porous materials
Author :
Yeoh, T.S. ; Swint, R.B. ; Elarde, V.C. ; Coleman, J.J. ; Rittenhouse, T.L. ; Bohn, P.W.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Volume :
1
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
134
Abstract :
We report recent results of epitaxy of InAs quantum dots utilizing PSi and PSiC templates as nucleation sites. Spherical InAs quantum dots with a high planar density of 1.6×109 cm-2 were grown by metalorganic, chemical vapor deposition. By using a gold catalyst, InAs nanowhiskers are also formed from these dots.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanoporous materials; nucleation; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; whiskers (crystal); InAs; InAs quantum dot; PSi templates; PSiC templates; gold catalyst; metalorganic chemical vapor deposition; nanowhisker; nucleation sites; planar density; porous materials; Chemical vapor deposition; Gold; Inorganic materials; Nanocrystals; Quantum dots; Silicon; Surface topography; Transmission line matrix methods; US Department of Transportation; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1231733
Filename :
1231733
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2072730
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