Title :
Perspective on BiCMOS
Author_Institution :
Hitachi America Ltd., Brisbane, CA, USA
Abstract :
The objective of Hi-BiCMOS is to combine speed performance approaching that of ECL and integration density approaching that of CMOS. A high-performance 1.3-μm BiCMOS technology and its applications to ASICs (application-specific integrated circuits) are described. This Hi-BiCMOS gate array contains 3072 gates and 90 input/output buffers. The inclusion of bipolar transistors enables this array to support both TTL (transistor-transistor logic) and ECL logic interfaces. A Hi-BiCMOS memory-plus-logic gate array has also been fabricated using a 1.3-μm drawn two-layer metal silicon gate process technology. It contains approximately 10 K logic gates, 4.6 kb of triple port RAM, and 220 input/output buffers. A Hi-BiCMOS standard cell library has been developed to improve design productivity in microprocessor designs. Megacells such as ALUs, registers, ROMs, RAMs, multipliers and other macrofunctions are available as part of the macro library
Keywords :
BIMOS integrated circuits; VLSI; application specific integrated circuits; integrated memory circuits; logic arrays; microprocessor chips; 1.3 micron; 4.6 kbit; ASICs; BiCMOS; ECL I/Os; ECL compatibility; ECL logic interfaces; Hi-BiCMOS; Hi-BiCMOS gate array; Si gate technology; TTL I/Os; TTL compatibility; TTL logic interfaces; VLSI; application-specific integrated circuits; bipolar transistors; integration density; macro library; macrocells; macrofunctions; megacells; memory-plus-logic gate array; microprocessor designs; output buffers; silicon gate process technology; speed performance; standard cell library; transistor-transistor logic; triple port RAM; two-layer metal; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Integrated circuit technology; Libraries; Logic arrays; Logic gates; Silicon;
Conference_Titel :
ASIC Seminar and Exhibit, 1989. Proceedings., Second Annual IEEE
Conference_Location :
Rochester, NY
DOI :
10.1109/ASIC.1989.123174
