DocumentCode :
2072939
Title :
A 25-Gb/s LD driver with area-effective inductor in a 0.18-µm CMOS
Author :
Kuboki, Takuo ; Ohtomo, Y. ; Tsuchiya, Akira ; Kishine, Keiji ; Onodera, Hidetoshi
Author_Institution :
Dept. Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
fYear :
2013
fDate :
22-25 Jan. 2013
Firstpage :
105
Lastpage :
106
Abstract :
This paper presents high-speed and area-efficient laser-diode driver with interwoven inductor in a 0.18-μm CMOS. We interweave ten peaking inductors for area-effective implementation as well as performance enhancement. Interwoven inductor can not only achieve area-efficiency but also tune frequency characteristic. Mutual inductances of interwoven inductor enhance bandwidth and suppress group delay dispersion. The test chip area is 0.32 mm2 and the maximum operating speed is 25 Gb/s.
Keywords :
CMOS integrated circuits; driver circuits; inductors; semiconductor lasers; CMOS; LD driver; area-effective implementation; area-effective inductor; area-efficiency; area-efficient laser-diode driver; bit rate 25 Gbit/s; frequency characteristic; group delay dispersion; interwoven inductor; mutual inductances; peaking inductors; performance enhancement; size 0.18 mum; Bandwidth; CMOS integrated circuits; CMOS technology; Frequency measurement; Inductors; Semiconductor device measurement; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location :
Yokohama
ISSN :
2153-6961
Print_ISBN :
978-1-4673-3029-9
Type :
conf
DOI :
10.1109/ASPDAC.2013.6509578
Filename :
6509578
Link To Document :
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