DocumentCode :
2073001
Title :
Effect of impurities in the channel of a spin field effect transistor (SPINFET)
Author :
Cahay, Marc ; Bandyopadhyay, Supriyo
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Volume :
1
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
171
Abstract :
We show that the conductance modulation of Spin Field Effect Transistors (SPINFET) is affected by a single (non-magnetic) impurity in the transistor´s channel. The extreme sensitivity of the amplitude and phase of the transistor´s conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device implementation is concerned.
Keywords :
current fluctuations; electric admittance; field effect transistors; impurity distribution; semiconductor device models; conductance fluctuations; conductance modulation; impurities effect; mesoscopic samples; spin field effect transistor; transistor channel; transistor conductance oscillations; Computer science; Electrons; FETs; Fluctuations; Impurities; Lighting control; Magnetic fields; Magnetization; Resonance; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1231743
Filename :
1231743
Link To Document :
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